位置:IS62LV12816BLL-70B > IS62LV12816BLL-70B详情

IS62LV12816BLL-70B中文资料

厂家型号

IS62LV12816BLL-70B

文件大小

94.45Kbytes

页面数量

10

功能描述

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

x16 SRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS62LV12816BLL-70B数据手册规格书PDF详情

DESCRIPTION

TheISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

• High-speed access time: 55, 70, 100 ns

• CMOS low power operation

– 120 mW (typical) operating

– 6 µW (typical) CMOS standby

• TTL compatible interface levels

• Single 2.7V-3.45V VCC power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm)

IS62LV12816BLL-70B产品属性

  • 类型

    描述

  • 型号

    IS62LV12816BLL-70B

  • 功能描述

    x16 SRAM

更新时间:2025-10-14 17:06:00
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