位置:IS61QDB41M18C-250B4LI > IS61QDB41M18C-250B4LI详情

IS61QDB41M18C-250B4LI中文资料

厂家型号

IS61QDB41M18C-250B4LI

文件大小

811.89Kbytes

页面数量

31

功能描述

1Mx18, 512Kx36 18Mb QUAD (Burst 4) SYNCHRONOUS SRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS61QDB41M18C-250B4LI数据手册规格书PDF详情

FEATURES

 512Kx36 and 1Mx18 configuration available.

 On-chip Delay-Locked loop (DLL) for wide data valid window.

 Separate independent read and write ports with concurrent read and write operations.

 Synchronous pipeline read with late write operation.

 Double Data Rate (DDR) interface for read and write input ports.

 1.5 cycle read latency.

 Fixed 4-bit burst for read and write operations.

 Clock stop support.

 Two input clocks (K and K#) for address and control registering at rising edges only.

 Two output clocks (C and C#) for data output control.

 Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.

 +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.

 HSTL input and output interface.

 Registered addresses, write and read controls, byte writes, data in, and data outputs.

 Full data coherency.

 Boundary scan using limited set of JTAG 1149.1 functions.

 Byte write capability.

 Fine ball grid array (FBGA) package:

13mmx15mm and 15mmx17mm body size

165-ball (11 x 15) array

 Programmable impedance output drivers via 5x user-supplied precision resistor.

更新时间:2025-11-23 15:01:00
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ISSI
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一级代理专营品牌!原装正品,优势现货,长期排单到货
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23+
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23+
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