位置:IS61NVP102436A-166B3I > IS61NVP102436A-166B3I详情

IS61NVP102436A-166B3I中文资料

厂家型号

IS61NVP102436A-166B3I

文件大小

228.58Kbytes

页面数量

22

功能描述

1Mb x 36 and 2Mb x 18 STATE BUS SRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS61NVP102436A-166B3I数据手册规格书PDF详情

DESCRIPTION

The 36 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP and 165-ball PBGA packages

• Power supply: NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5) NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

• Industrial temperature available

• Lead-free available

更新时间:2025-12-15 18:29:00
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