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IS61NSCS51236-333B中文资料

厂家型号

IS61NSCS51236-333B

文件大小

182.73Kbytes

页面数量

32

功能描述

RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS61NSCS51236-333B数据手册规格书PDF详情

SigmaRAM Family Overview

The IS61NSCS series ΣRAMs are built in compliance with the SigmaRAM pinout standard for synchronous SRAMs. The implementations are 18,874,368-bit (18Mb) SRAMs. These are the first in a family of wide, very low voltage CMOS I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems.

Features

• JEDEC SigmaRam pinout and package standard

• Single 1.8V power supply (VCC): 1.7V (min) to 1.9V (max)

• Dedicated output supply voltage (VCCQ): 1.8V or 1.5V typical

• LVCMOS-compatible I/O interface

• Common data I/O pins (DQs)

• Single Data Rate (SDR) data transfers

• Pipelined (PL) read operations

• Double Late Write (DLW) write operations

• Burst and non-burst read and write operations, selectable via dedicated control pin (ADV)

• Internally controlled Linear Burst address sequencing during burst operations

• Burst length of 2, 3, or 4, with automatic address wrap

• Full read/write coherency

• Byte write capability

• Two cycle deselect

• Single-ended input clock (CLK)

• Data-referenced output clocks (CQ/CQ)

• Selectable output driver impedance via dedicated control pin (ZQ)

• Echo clock outputs track data output drivers

• Depth expansion capability (2 or 4 banks) via programmable chip enables (E2, E3, EP2, EP3)

• JTAG boundary scan (subset of IEEE standard 1149.1)

• 209 pin (11x19), 1mm pitch, 14mm x 22mm Ball Grid Array (BGA) package

更新时间:2025-11-29 9:30:00
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