位置:IS61NLP51218A-250B2I > IS61NLP51218A-250B2I详情

IS61NLP51218A-250B2I中文资料

厂家型号

IS61NLP51218A-250B2I

文件大小

261.57Kbytes

页面数量

37

功能描述

256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS61NLP51218A-250B2I数据手册规格书PDF详情

DESCRIPTION

The 9 Meg NLP/NVP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single R/W (Read/Write) control pin

• Clock controlled, registered address, data and control

• Interleaved or linear burst sequence control using MODE input

• Three chip enables for simple depth expansion and address pipelining

• Power Down mode

• Common data inputs and data outputs

• CKE pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 165-ball PBGA and 119- ball PBGA packages

• Power supply:

NVP: VDD 2.5V (± 5), VDDQ 2.5V (± 5)

NLP: VDD 3.3V (± 5), VDDQ 3.3V/2.5V (± 5)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

更新时间:2021-9-14 10:50:00
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