位置:IS61LV6416-8BI > IS61LV6416-8BI详情

IS61LV6416-8BI中文资料

厂家型号

IS61LV6416-8BI

文件大小

146.94Kbytes

页面数量

16

功能描述

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS61LV6416-8BI数据手册规格书PDF详情

DESCRIPTION

The ISSI IS61LV6416/IS61LV6416L is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

• High-speed access time: 8, 10, 12 ns

• CMOS low power operation

— 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current

— 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

IS61LV6416-8BI产品属性

  • 类型

    描述

  • 型号

    IS61LV6416-8BI

  • 制造商

    ICSI

  • 制造商全称

    Integrated Circuit Solution Inc

  • 功能描述

    64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

更新时间:2025-12-5 9:31:00
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