FEATURES

• Standard Voltage : VDD = VDDQ

• Dual Rank: Each rank has its own CS, ODT, and CKE

= 1.2V, VPP=2.5V

• High speed data transfer rates with system frequency

up to 2400 Mbps

• Data Integrity

- Auto Self Refresh (ASR) by DRAM built-in TS

- Auto Refresh and Self Refresh Modes

• DRAM access bandwidth

- Separated IO gating structures by Bank Groups

- Self Refresh Abort

- Fine Granularity Refresh

• Signal Synchronization

- Write Leveling via MR settings

- Read Leveling via MPR

• Reliability & Error Handling

- Command/Address Parity

- Data bus Write CRC

- MPR readout

- Boundary Scan

• Speed Grade (CL-TRCD-TRP)

- 2400Mbps / 17-17-17 (-083T)

• Signal Integrity

- Internal VREFDQ Training

- Read Preamble Training

- Gear Down Mode

- Per DRAM Adressability

- Configurable DS for system compatibility

- Configurable On-Die Termination

- Data bus Inversion (DBI) for Writes

- ZQ Calibration for DS/ODT impedance accuracy via external

ZQ pad (240 ohm +/- 1%)

• Power Saving and efficiency

- POD with VDDQ termination

- Command/Address Latency (CAL)

- Maximum Power Saving

- Low power Auto Self Refresh (LPASR)

• Operating Temperature

- Commercial (Tc = 0 oC to +95 oC)

- Industrial (Tc = -40°C to +95°C)

- Automotive A1 (Tc = -40°C to +95°C)

- Automotive A2 (Tc = -40°C to +105°C)

- Automotive A3 (Tc = -40°C to +125°C)