位置:IS46DR16640B-3DBLA1 > IS46DR16640B-3DBLA1详情

IS46DR16640B-3DBLA1中文资料

厂家型号

IS46DR16640B-3DBLA1

文件大小

1065.8Kbytes

页面数量

29

功能描述

1Gb (x8, x16) DDR2 SDRAM

数据手册

原厂下载下载地址一下载地址二

生产厂商

ISSI

IS46DR16640B-3DBLA1数据手册规格书PDF详情

FEATURES

 Clock frequency up to 400MHz

 8 internal banks for concurrent operation

 4-bit prefetch architecture

 Programmable CAS Latency: 3, 4, 5, 6 and 7

 Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6

 Write Latency = Read Latency-1

 Programmable Burst Sequence: Sequential or Interleave

 Programmable Burst Length: 4 and 8

 Automatic and Controlled Precharge Command

 Power Down Mode

 Auto Refresh and Self Refresh

 Refresh Interval: 7.8 s (8192 cycles/64 ms)

 ODT (On-Die Termination)

 Weak Strength Data-Output Driver Option

 Bidirectional differential Data Strobe (Single-ended data-strobe is an optional feature)

 On-Chip DLL aligns DQ and DQs transitions with CK transitions

 DQS# can be disabled for single-ended data strobe

 Read Data Strobe supported (x8 only)

 Differential clock inputs CK and CK#

 VDD and VDDQ = 1.8V ± 0.1V

 PASR (Partial Array Self Refresh)

 SSTL_18 interface

 tRAS lockout supported

 Operating temperature:

Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)

Industrial (TA = -40°C to 85°C; TC = -40°C to 95°C)

Automotive, A1 (TA = -40°C to 85°C; TC = -40°C to 95°C) Automotive, A2 (TA = -40°C to 105°C; TC = -40°C to 105°C)

更新时间:2021-9-14 10:50:00
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