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IS43TR85120BL中文资料
IS43TR85120BL数据手册规格书PDF详情
FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system frequency up
to 1066 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C
1.95 μs (8192 cycles/16 ms) Tc= 105°C to 115°C
0.97 μs (8192 cycles/8 ms) Tc= 115°C to 125°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200MHz in DLL off mode
• Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
Automotive, A25 (TC = -40°C to +115°C)
Automotive, A3 (TC = -40°C to +125°C)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
78-TFBGA |
30000 |
原厂原装,价格优势,欢迎洽谈! |
|||
ISSI |
26+ |
78-TFBGA |
60000 |
只有原装,可BOM表配单 |
|||
ISSI, Integrated Silicon Solut |
24+25+ |
16500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
||||
ISSI/矽成 |
21+ |
SOP |
7000 |
正品渠道现货,终端可提供BOM表配单。 |
|||
ISSI, Integrated Silicon Solut |
2年内批号 |
78-TWBGA(8x10.5) |
4800 |
只供原装进口公司现货+可订货 |
|||
ISSI |
22+ |
BGA78 |
20000 |
公司只做原装 品质保障 |
|||
ISSI |
25+ |
BGA |
4500 |
ISSI存储芯片在售 |
|||
ISSI |
21+ |
FBGA |
167 |
||||
ISSI |
21+ |
BGA78 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ISSI |
23+ |
BGA78 |
3510 |
原厂原装正品 |
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