位置:IS43TR82560C-15HBL > IS43TR82560C-15HBL详情

IS43TR82560C-15HBL中文资料

厂家型号

IS43TR82560C-15HBL

文件大小

3497.09Kbytes

页面数量

87

功能描述

256Mx8, 128Mx16 2Gb DDR3 SDRAM

数据手册

原厂下载下载地址一下载地址二

生产厂商

ISSI

IS43TR82560C-15HBL数据手册规格书PDF详情

FEATURES

 Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

 Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V

 High speed data transfer rates with system frequency up to 933 MHz

 8 internal banks for concurrent operation

 8n-Bit pre-fetch architecture

 Programmable CAS Latency

 Programmable Additive Latency: 0, CL-1,CL-2

 Programmable CAS WRITE latency (CWL) based on tCK

 Programmable Burst Length: 4 and 8

 Programmable Burst Sequence: Sequential or Interleave

 BL switch on the fly

 Auto Self Refresh(ASR)

 Self Refresh Temperature(SRT)

 Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

 Partial Array Self Refresh

 Asynchronous RESET pin

 TDQS (Termination Data Strobe) supported (x8 only)

 OCD (Off-Chip Driver Impedance Adjustment)

 Dynamic ODT (On-Die Termination)

 Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

 Write Leveling

 Up to 200 MHz in DLL off mode

 Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)

更新时间:2025-10-13 19:00:00
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