位置:IS43LR32100D-6BLI > IS43LR32100D-6BLI详情

IS43LR32100D-6BLI中文资料

厂家型号

IS43LR32100D-6BLI

文件大小

1815.23Kbytes

页面数量

42

功能描述

512K x 32Bits x 2Banks Mobile DDR SDRAM

数据手册

原厂下载下载地址一下载地址二

生产厂商

ISSI

IS43LR32100D-6BLI数据手册规格书PDF详情

Features

• JEDEC standard 1.8V power supply

• Two internal banks for concurrent operation

• MRS cycle with address key programs

- CAS latency 2, 3 (clock)

- Burst length (2, 4, 8, 16)

- Burst type (sequential & interleave)

• Fully differential clock inputs (CK, /CK)

• All inputs except data & DM are sampled at the rising

edge of the system clock

• Data I/O transaction on both edges of data strobe

• Bidirectional data strobe per byte of data (DQS)

• DM for write masking only

• Edge aligned data & data strobe output

• Center aligned data & data strobe input

• 64ms refresh period (4K cycle)

• Auto & self refresh

• Concurrent Auto Precharge

• Maximum clock frequency up to 166MHz

• Maximum data rate up to 333Mbps/pin

• Power Saving support

- PASR (Partial Array Self Refresh)

- Auto TCSR (Temperature Compensated Self Refresh)

- Deep Power Down Mode

- Programmable Driver Strength Control by Full Strength

or 3/4, 1/2, 1/4, 1/8 of Full Strength

• LVCMOS compatible inputs/outputs

更新时间:2021-9-14 10:50:00
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