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IS42S81600D-7T中文资料
IS42S81600D-7T数据手册规格书PDF详情
OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
VDD VDDQ
IS42S81600D 3.3V 3.3V
IS42S16800D 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability
IS42S81600D-7T产品属性
- 类型
描述
- 型号
IS42S81600D-7T
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
25+ |
TSOP |
61 |
普通 |
|||
ISSI |
2447 |
standard |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ISSI |
25+ |
TSOP-54 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
ISSI |
21+ |
TSOP54 |
1975 |
||||
ISSI |
25+ |
NA |
10000 |
原装现货假一罚十 |
|||
ISSI |
24+ |
NA |
58735 |
||||
ISSI |
2023+环保现货 |
TSOP |
8500 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
ISSI |
0 |
* |
50 |
||||
ISSI |
2025+ |
TSOP |
3615 |
全新原厂原装产品、公司现货销售 |
|||
ISSI |
2023+ |
SMD |
60 |
安罗世纪电子只做原装正品货 |
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