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IS42S32400E-75ETL中文资料

厂家型号

IS42S32400E-75ETL

文件大小

895.21Kbytes

页面数量

60

功能描述

4M x 32 128Mb SYNCHRONOUS DRAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS42S32400E-75ETL数据手册规格书PDF详情

OVERVIEW

ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

FEATURES

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single Power supply: 3.3V + 0.3V

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

IS42S32400E-75ETL产品属性

  • 类型

    描述

  • 型号

    IS42S32400E-75ETL

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    4M x 32 128Mb SYNCHRONOUS DRAM

更新时间:2025-10-10 16:31:00
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1234+
QFN
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一级代理,专注军工、汽车、医疗、工业、新能源、电力
ISSI
2023+环保现货
90-FBGA
480
专注军工、汽车、医疗、工业等方案配套一站式服务
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2023+
90-FBGA
50000
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25+
BGA-90
16000
原装优势绝对有货
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电联咨询
7800
公司现货,提供拆样技术支持

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