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IS42S16800D中文资料
IS42S16800D数据手册规格书PDF详情
OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
VDD VDDQ
IS42S81600D 3.3V 3.3V
IS42S16800D 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh with programmable refresh periods
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Industrial Temperature Availability
• Lead-free Availability
IS42S16800D产品属性
- 类型
描述
- 型号
IS42S16800D
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
存储器 |
TSOP |
41945 |
ISSI存储芯片IS42S16800D-7TL即刻询购立享优惠#长期有货 |
|||
ISSI |
23+ |
SOP |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
ISSI |
2021+ |
TSOP |
9450 |
原装现货。 |
|||
ISSI |
21+ |
TSOP |
10000 |
全新原装 公司现货 价优 |
|||
ISSI |
24+ |
TSOP54 |
259 |
只做原厂渠道 可追溯货源 |
|||
ISSI |
23+ |
TSOP |
98900 |
原厂原装正品现货!! |
|||
ISSI |
2021+ |
TSOP |
6800 |
原厂原装,欢迎咨询 |
|||
ISSI |
25+ |
TSOP |
13800 |
原装,请咨询 |
|||
ISSI |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
ISSI |
13+ |
TSOP |
15458 |
只做原厂原装,认准宝芯创配单专家 |
IS42S16800D 资料下载更多...
IS42S16800D相关电子新闻
IS42S16800D-7TLI
SDRAM 16 bit 动态随机存取存储器 , BGA-54 SDRAM 动态随机存取存储器 , SDRAM 32 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3 动态随机存取存储器 , 512 Mbit SDRAM 32 bit 133 MHz - 40 C 动态随机存取存储器 , 512 Mbit TSOP-54 SDRAM 16 bit 动态随机存取存储器
2020-7-8
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