DESCRIPTION

TheISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

FEATURES

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs

• Refresh Interval: -- 2,048 cycles/32 ms

• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden

• Single power supply: 5V±10 or 3.3V ± 10

• Byte Write and Byte Read operation via two CAS

• Industrial temperature range -40°C to 85°C