DESCRIPTION

TheISSIIS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply:

— 3.3V ± 10 (IS41LV16100A)

• Byte Write and Byte Read operation via two CAS

• Industrial Temperature Range: -40°C to +85°C

• Lead-free available