DESCRIPTION

TheISSIIS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16- bit word. The Byte Write control, of upper and lower byte, makes the IS41C16128 ideal for use in 16-, 32-bit wide data bus systems.

FEATURES

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs

• Refresh Interval: 512 cycles/8 ms

• Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single +5V ± 10 power supply

• Byte Write and Byte Read operation via two CAS

• Available in 40-pin SOJ and TSOP (Type II)

• Industrial temperature available