位置:JANSG2N7268 > JANSG2N7268详情

JANSG2N7268中文资料

厂家型号

JANSG2N7268

文件大小

444.14Kbytes

页面数量

12

功能描述

RADIATION HARDENED POWER MOSFET THRU-HOLE

HIREL HEXFET RHD QPL - Bulk

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

JANSG2N7268数据手册规格书PDF详情

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

International Rectifier’s RADHardTM HEXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Features:

■ Single Event Effect (SEE) Hardened

■ Low RDS(on)

■ Low Total Gate Charge

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Ceramic Eyelets

■ Light Weight

JANSG2N7268产品属性

  • 类型

    描述

  • 型号

    JANSG2N7268

  • 制造商

    International Rectifier

  • 功能描述

    HIREL HEXFET RHD QPL - Bulk

更新时间:2025-10-7 14:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-254
6000
终端可免费供样,支持BOM配单
IR
23+
TO-254
8000
只做原装现货
IR
23+
TO-254
7000
IR
24+
N/A
90000
一级代理商进口原装现货、价格合理
IR
24+
12
全新原装
IR
N/A
N/A
100
军工品,原装正品
IR
18+
原厂原装假一赔十
11
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔