Description

The IRS2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Features

• Floating channel designed for bootstrap operation

• Fully operational to +600 V

• Tolerant to negative transient voltage, dV/dt immune

• Gate drive supply range from 10 V to 20 V

• Undervoltage lockout for both channels

• CMOS Schmitt-triggered inputs with pull-down

• Matched propagation delay for both channels

• Internally set deadtime

• High side output in phase with input