Description

The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.

Features and Benefits

•Environmentally Friendly Product

•RoHs compliant containing no Lead, no Bromide

and no Halogen

•Very Low RDS(on)

Applications

•ORing, eFuse, and high current

load switch

•Load switch for battery

application

•Inverter switches for DC motor

application