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IRL2910SPBF中文资料
IRL2910SPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for lowprofile applications.
● Logic-Level Gate Drive
● Surface Mount
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRL2910SPBF产品属性
- 类型
描述
- 型号
IRL2910SPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
07+ |
原厂原装 |
3400 |
自己公司全新库存绝对有货 |
|||
IR |
24+ |
原厂封装 |
2850 |
原装现货假一罚十 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
24+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
24+ |
65230 |
|||||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
INFINEON/英飞凌 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
IRL2910SPBF 价格
参考价格:¥5.7068
IRL2910SPBF 资料下载更多...
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