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IRL2910L数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
IRL2910L产品属性
- 类型
描述
- 型号
IRL2910L
- 功能描述
MOSFET N-CH 100V 55A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
TO-220 |
32360 |
IR全新特价IRL2910LPBF即刻询购立享优惠#长期有货 |
|||
IR |
2015+ |
TO-262 |
12500 |
全新原装,现货库存长期供应 |
|||
ir |
06+ |
TO-262 |
15000 |
原装库存 |
|||
IR |
24+ |
TO-262 |
8866 |
||||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
INFINEON |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-262-3 |
16467 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
IRL2910L 资料下载更多...
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