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IRHM8230数据手册规格书PDF详情
200Volt, 0.40Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
Features:
■ Radiation Hardened up to 1 x 106 Rads (Si)
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
IRHM8230产品属性
- 类型
描述
- 型号
IRHM8230
- 制造商
International Rectifier
- 功能描述
HIREL, HEXFET RHD - Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
22+ |
6000 |
终端可免费供样,支持BOM配单 |
||||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
||||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
||||
IR |
23+ |
7000 |
|||||
IR |
23+ |
TO-254 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
IR |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
|||
IR |
24+ |
8 |
全新原装 |
||||
IR |
N/A |
N/A |
100 |
军工品,原装正品 |
|||
IR |
18+ |
原厂原装假一赔十 |
57 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
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International Rectifier
International Rectifier Corporation(简称IRF)是一家全球领先的功率半导体制造商,成立于1947年,总部位于美国加利福尼亚州。IRF专注于开发和提供高效能的功率管理解决方案,其产品广泛应用于汽车、工业、消费电子、航空航天、通信和计算等多个领域。公司以其功率MOSFET闻名,提供多种类型的整流二极管,包括肖特基二极管和超快恢复二极管,同时还开发IGBT(绝缘栅双极晶体管)和电源管理IC。IRF在功率半导体领域的创新和技术积累为其赢得了良好的声誉,并于2014年被英飞凌科技股份公司(Infineon Technologies AG)收购,这一收购旨在增强英飞凌在