位置:IRGPH20S > IRGPH20S详情

IRGPH20S中文资料

厂家型号

IRGPH20S

文件大小

240.26Kbytes

页面数量

6

功能描述

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRGPH20S数据手册规格书PDF详情

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

Features

• Switching-loss rating includes all tail losses

• Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve

IRGPH20S产品属性

  • 类型

    描述

  • 型号

    IRGPH20S

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A)

更新时间:2025-10-6 8:10:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 247
161087
明嘉莱只做原装正品现货
IR
16+
TO-3P
10000
全新原装现货
IR
22+
TO
6000
十年配单,只做原装
IR
23+
TO
6000
原装正品,支持实单
IR
2025+
TO-247
4675
全新原厂原装产品、公司现货销售
IR
23+
TO
8000
只做原装现货
IR
23+
TO
7000
IR
25+
TO
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
NEW
TO-247
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
IR
23+
TO-3P
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种