Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while atthe same time having simpler gate-drive requirements of the familiar powerMOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Features

• Short circuit rated - 10μs @ 125°C, VGE = 15V

• Switching-loss rating includes all tail losses

• Optimized for medium operating frequency (over 5kHz)

See Figure 1 for Current vs. Frequency curve