Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the half-current frequency ), as well as an indication of the current handling capability of the device.

Features

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

• Latch-proof

• Fast Speed operation >10 kHz

• Switching-loss rating includes all tail losses