Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSE™ rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery circuits in PDP applications

Low VCE(on)and Energy per Pulse (EPULSE™) for improved panel efficiency

High repetitive peak current capability

Lead Free package