位置：IRG7PH35UD1-EP > IRG7PH35UD1-EP详情
IRG7PH35UD1-EP中文资料
IRG7PH35UD1-EP数据手册规格书PDF详情
Features
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
• Square RBSOA
• Ultra-Low VFDiode
• 1300Vpk Repetitive Transient Capacity
• 100 of the Parts Tested for ILM
• Positive VCE (ON) Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
IRG7PH35UD1-EP产品属性
- 类型
描述
- 型号
IRG7PH35UD1-EP
- 制造商
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR
- 制造商
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR; Transistor
- Type
IGBT; DC Collector
- Current
50A; Collector Emitter Voltage
- Vces
1.2kV; Power Dissipation
- Pd
179mW; Operating Temperature
- Min
-55C; Operating Temperature
- Max
150C; No. of
- Pins
3 ;RoHS
- Compliant
Yes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247 |
2060 |
只做原厂渠道 可追溯货源 |
|||
IR |
2021+ |
TO-247 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Infineon |
24+ |
NA |
3405 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
IR |
13+ |
TO247COPAK |
27000 |
普通 |
|||
INFINEON |
25+ |
TO-247 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
24+ |
TO-3P |
9600 |
原装现货,优势供应,支持实单! |
IRG7PH35UD1-EP 价格
参考价格：￥17.4636
IRG7PH35UD1-EP 资料下载更多...
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