位置:IRG4BC40WS > IRG4BC40WS详情

IRG4BC40WS中文资料

厂家型号

IRG4BC40WS

文件大小

343.85Kbytes

页面数量

10

功能描述

INSULATED GATE BIPOLAR TRANSISTOR

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRG4BC40WS数据手册规格书PDF详情

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50 reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

(hard switched mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

IRG4BC40WS产品属性

  • 类型

    描述

  • 型号

    IRG4BC40WS

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR

更新时间:2025-10-4 11:03:00
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ir
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