VDSS = 500V

RDS(on) = 0.40Ω

ID = 14A

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

● Ultra Low Gate Charge

● Reduced Gate Drive Requirement

● Enhanced 30V V

● gs Rating

● Reduced Ciss, Coss, Crss

● Isolated Central Mounting Hole

● Dynamic dv/dt Rated

● Repetitive Avalanche Rated