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IRFL1006PBF中文资料
IRFL1006PBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
● Surface Mount
● Advanced Process Technology
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRFL1006PBF产品属性
- 类型
描述
- 型号
IRFL1006PBF
- 功能描述
MOSFET MOSFT 60V 2.3A 220mOhm 5.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
SOT-223 |
18657 |
只做原厂渠道 可追溯货源 |
|||
IR |
2450+ |
SOT-223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
IR |
25+23+ |
SOT-223 |
28350 |
绝对原装正品全新进口深圳现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
23+ |
SOT-223 |
30000 |
全新原装现货,价格优势 |
|||
IR |
2447 |
SOT223 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
SOT-223 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
SOT-223 |
50000 |
全新原装正品现货,支持订货 |
IRFL1006PBF 资料下载更多...
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