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IRFL1006中文资料
IRFL1006数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
• Surface Mount
• Advanced Process Technology
• Dynamic dv/dt Rating
• Fast Switching
• Fully Avalanche Rated
IRFL1006产品属性
- 类型
描述
- 型号
IRFL1006
- 功能描述
MOSFET N-CH 60V 1.6A SOT223
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
SOT-223 |
35665 |
INFINEON/英飞凌全新特价IRFL1006TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
SOT-223 |
18657 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
SOT-223 |
500754 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2450+ |
SOT-223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INTERNATIONA |
05+ |
原厂原装 |
4587 |
只做全新原装真实现货供应 |
|||
IR |
12+ |
SOT-223 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
IR |
23+ |
SOT-223 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
SOT-223 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
25+23+ |
SOT223 |
75303 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
IR |
18+ |
SOT-223 |
41200 |
原装正品,现货特价 |
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IRFL1006 芯片相关型号
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