Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.

Features

• Key parameters optimized for Class-D audio amplifier applications

• Low RDSON for improved efficiency

• Low QG and QSW for better THD and improved efficiency

• Low QRR for better THD and lower EMI

• 175°C operating junction temperature for ruggedness

• Can deliver up to 300W per channel into 8Ω load in half-bridge topology