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IRF9410中文资料
IRF9410数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
● Generation V Technology
● Ultra Low On-Resistance
● N-Channel MOSFET
● Surface Mount
● Very Low Gate Charge and Switching Losses
● Fully Avalanche Rated
IRF9410产品属性
- 类型
描述
- 型号
IRF9410
- 功能描述
MOSFET N-CH 30V 7A 8-SOIC
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF/SOP3.9 |
NA |
7880 |
原盒原包装现货原装假一罚十价优 |
||||
IR |
25+ |
SOP-8 |
35659 |
IR全新特价IRF9410TRPBF即刻询购立享优惠#长期有货 |
|||
IR |
2016+ |
SOP8 |
5454 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
24+ |
SOP-8 |
296 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/英飞凌 |
20+ |
SO8 |
120000 |
原装正品 可含税交易 |
|||
IR |
2021+ |
SO-8 |
9000 |
原装现货,随时欢迎询价 |
|||
Infineon(英飞凌) |
24+ |
SOP-8 |
10613 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
SOP-8 |
500734 |
免费送样原盒原包现货一手渠道联系 |
|||
NK/南科功率 |
SOP-8 |
2255 |
国产南科平替供应大量 |
||||
IR |
24+ |
SOP-8 |
6360 |
新进库存/原装 |
IRF9410TRPBF 价格
参考价格：￥1.8191
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IRF9410 芯片相关型号
Datasheet数据表PDF页码索引
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