Description

The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge.

Features

• Output Power MOSFETs in half-bridge configuration

• High side gate drive designed for bootstrap operation

• Bootstrap diode integrated into package (HD type)

• Accurate timing control for both Power MOSFETs

Matched delay to get 50 duty cycle

Matched deadtime of 1.2us

• Internal oscillator with programmable frequency

• 15.6V Zener clamped Vcc for offline operation

• Half-bridge output is out of phase with RT

• Micropower startup