Description

The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS output down to 3.3V. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high or low side configuration which operates up to 150 volts.

Features

• Floating channel designed for bootstrap operation Fully operational up to 150V Tolerant to negative transient voltage, dV/dt immune

• Gate drive supply range from 5V to 20V

• Undervoltage lockout

• Internal recharge FET for bootstrap refresh

• Internal deadtime of 11µs and 0.8µs

• CMOS Schmitt-triggered input logic

• Output out of phase with input

• Reset input

• Split pull-up and pull-down gate drive pins

• Also available LEAD-FREE (PbF)