位置:IR082HD4C10U-P2 > IR082HD4C10U-P2详情

IR082HD4C10U-P2中文资料

厂家型号

IR082HD4C10U-P2

文件大小

50.52Kbytes

页面数量

7

功能描述

HIGH VOLTAGE HALF BRIDGE

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IR082HD4C10U-P2数据手册规格书PDF详情

Description

The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The frontend features an independent high and low side driver in phase with the logic compatible input signals. The output features two IGBT’s in a halfbridge configuration. Propagation delays for the high and low side power IGBT’s are matched to simplify use. The device can operate up to 575 volts.

Features

• Output Power IGBT’s in half-bridge configuration

• 575V rated breakdown voltage

• High side gate drive designed for bootstrap operation

• Matched propagation delay for both channels

• Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2)

• Undervoltage lockout

• 3.3V, 5V and 15V input logic compatible

• Metal heatsink back for improved PD

IR082HD4C10U-P2产品属性

  • 类型

    描述

  • 型号

    IR082HD4C10U-P2

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    HIGH VOLTAGE HALF BRIDGE

更新时间:2026-2-4 16:30:00
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