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G4BC30UD中文资料

厂家型号

G4BC30UD

文件大小

234.03Kbytes

页面数量

10

功能描述

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

G4BC30UD数据手册规格书PDF详情

Features

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a drop-in replacement for equivalent

industry-standard Generation 3 IR IGBTs

更新时间:2025-10-6 14:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-220
6000
十年配单,只做原装
IR
25+
TO220
3000
全新原装、诚信经营、公司现货销售
IR
23+
TO-TO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR
23+
TO-220
8000
只做原装现货
N/A
24+
NA
990000
明嘉莱只做原装正品现货
IR
23+
TO-220
7000
IR
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
25+
TO-220
484
原装正品,假一罚十!
IR
24+
TO-220
60000
全新原装现货
SIPEX
23+
TO-263
69820
终端可以免费供样,支持BOM配单!