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F1010E中文资料
F1010E数据手册规格书PDF详情
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
更新时间：2025-10-13 16:30:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
15 |
||||
IR |
22+ |
TO-220 |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
2023+ |
TO-220 |
50000 |
原装现货 |
|||
IR |
23+ |
TO-220 |
6000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
IR |
24+ |
TO-220 |
95000 |
郑重承诺只做原装进口现货 |
|||
IR |
23+ |
TO220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
LITEON/光宝 |
23+ |
DIP-6 |
69820 |
终端可以免费供样,支持BOM配单! |
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