Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

Description