Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.

Features

• Advanced Process Technology

• Dual N-Channel MOSFET

• Ultra Low On-Resistance

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified *

Applications

• 12V Automotive Systems

• Brushed DC Motor

• Braking

• Transmission