位置:X28HC256DI-12 > X28HC256DI-12详情

X28HC256DI-12中文资料

厂家型号

X28HC256DI-12

文件大小

286.89Kbytes

页面数量

15

功能描述

5 Volt, Byte Alterable EEPROM

5V, Byte Alterable EEPROM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INTERSIL

X28HC256DI-12数据手册规格书PDF详情

5V, Byte Alterable EEPROM

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory

Features

• Access time: 70ns

• Simple byte and page write

- Single 5V supply

- No external high voltages or VP-P control circuits

- Self-timed

- No erase before write

- No complex programming algorithms

- No overerase problem

• Low power CMOS

- Active: 60mA

- Standby: 500µA

• Software data protection

- Protects data against system level inadvertent writes

• High speed page write capability

• Highly reliable Direct Write™ cell

- Endurance: 1,000,000 cycles

- Data retention: 100 years

• Early end of write detection

- DATA polling

- Toggle bit polling

• Pb-free plus anneal available (RoHS compliant)

X28HC256DI-12产品属性

  • 类型

    描述

  • 型号

    X28HC256DI-12

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    5V, Byte Alterable EEPROM

更新时间:2025-10-14 16:30:00
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