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MWS5114E2中文资料

厂家型号

MWS5114E2

文件大小

29.33Kbytes

页面数量

7

功能描述

1024-Word x 4-Bit LSI Static RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INTERSIL

MWS5114E2数据手册规格书PDF详情

Description

The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS (CMOS) technology. It is designed for use in memory systems where low power and simplicity in use are desirable. This type has common data input and data output and utilizes a single power supply of 4.5V to 6.5V.

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line sidebrazed ceramic packages (D suffix) and in 18 lead dual in-line plastic packages (E suffix).

Features

• Fully Static Operation

• Industry Standard 1024 x 4 Pinout (Same as Pinouts for 6514, 2114, 9114, and 4045 Types)

• Common Data Input and Output

• Memory Retention for Standby Battery Voltage as Low as 2V Min

• All Inputs and Outputs Directly TTL Compatible

• Three-State Outputs

• Low Standby and Operating Power

MWS5114E2产品属性

  • 类型

    描述

  • 型号

    MWS5114E2

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    1024-Word x 4-Bit LSI Static RAM

更新时间:2025-12-9 13:30:00
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