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ISL6609IRZ-T中文资料
ISL6609IRZ-T数据手册规格书PDF详情
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
• ISL6605 Replacement with Enhanced Performance
• BOOT Capacitor Overcharge Prevention (ISL6609A)
• Low VF Internal Bootstrap Diode
• Low Bias Supply Current
• Enable Input and Power-On Reset
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile High Efficiency DC/DC
Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
ISL6609IRZ-T产品属性
- 类型
描述
- 型号
ISL6609IRZ-T
- 功能描述
IC MOSFET DRVR SYNC BUCK 8-QFN
- RoHS
是
- 类别
集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关
- 系列
-
- 标准包装
5
- 系列
-
- 配置
低端
- 输入类型
非反相
- 延迟时间
600ns 电流 -
- 峰
12A
- 配置数
1
- 输出数
1 高端电压 -
- 最大(自引导启动)
-
- 电源电压
14.2 V ~ 15.8 V
- 工作温度
-20°C ~ 60°C
- 安装类型
通孔
- 封装/外壳
21-SIP 模块
- 供应商设备封装
模块
- 包装
散装
- 配用
BG2A-NF-ND - KIT DEV BOARD FOR IGBT
- 其它名称
835-1063
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
25+ |
QFN-8 |
6000 |
就找我吧!--邀您体验愉快问购元件! |
|||
INTERSIL |
21+ |
QFN-8 |
10000 |
原装现货假一罚十 |
|||
INTERSIL |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
|||
INTERSIL |
23+ |
NA |
127 |
专做原装正品,假一罚百! |
|||
INTERSIL |
24+ |
QFN |
37200 |
原装现货/放心购买 |
|||
Intersil |
2318+ |
VQFN-8 |
6890 |
长期供货进口原装热卖现货 |
|||
Intersil |
25+ |
8-VQFN |
4258 |
原装正品 价格优势 |
|||
Intersil |
22+ |
14SOIC |
9000 |
原厂渠道,现货配单 |
|||
Intersil |
25+ |
16LDQFN |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
INTERSIL |
23+ |
QFN-16 |
89630 |
当天发货全新原装现货 |
ISL6609IRZ-T 资料下载更多...
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