位置:ISL6609IRZ-T > ISL6609IRZ-T详情

ISL6609IRZ-T中文资料

厂家型号

ISL6609IRZ-T

文件大小

1671.31Kbytes

页面数量

12

功能描述

Synchronous Rectified MOSFET Driver

IC MOSFET DRVR SYNC BUCK 8-QFN

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

INTERSIL

ISL6609IRZ-T数据手册规格书PDF详情

The ISL6609, ISL6609A is a high frequency, MOSFET driver

optimized to drive two N-Channel power MOSFETs in a

synchronous-rectified buck converter topology. This driver

combined with an Intersil ISL63xx or ISL65xx multiphase

PWM controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6609, ISL6609A features 4A typical sink current for

the lower gate driver, enhancing the lower MOSFET gate

hold-down capability during PHASE node rising edge,

preventing power loss caused by the self turn-on of the lower

MOSFET due to the high dV/dt of the switching node.

The ISL6609, ISL6609A also features an input that

recognizes a high-impedance state, working together with

Intersil multiphase PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage. In addition, the

ISL6609A’s bootstrap function is designed to prevent the

BOOT capacitor from overcharging, should excessively large

negative swings occur at the transitions of the PHASE node.

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

- Fast Output Rise and Fall

- Ultra Low Three-State Hold-Off Time (20ns)

• ISL6605 Replacement with Enhanced Performance

• BOOT Capacitor Overcharge Prevention (ISL6609A)

• Low VF Internal Bootstrap Diode

• Low Bias Supply Current

• Enable Input and Power-On Reset

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

• Pb-Free (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel® and AMD®

Microprocessors

• High Frequency Low Profile High Efficiency DC/DC

Converters

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

ISL6609IRZ-T产品属性

  • 类型

    描述

  • 型号

    ISL6609IRZ-T

  • 功能描述

    IC MOSFET DRVR SYNC BUCK 8-QFN

  • RoHS

  • 类别

    集成电路(IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关

  • 系列

    -

  • 标准包装

    5

  • 系列

    -

  • 配置

    低端

  • 输入类型

    非反相

  • 延迟时间

    600ns 电流 -

  • 12A

  • 配置数

    1

  • 输出数

    1 高端电压 -

  • 最大(自引导启动)

    -

  • 电源电压

    14.2 V ~ 15.8 V

  • 工作温度

    -20°C ~ 60°C

  • 安装类型

    通孔

  • 封装/外壳

    21-SIP 模块

  • 供应商设备封装

    模块

  • 包装

    散装

  • 配用

    BG2A-NF-ND - KIT DEV BOARD FOR IGBT

  • 其它名称

    835-1063

更新时间:2021-9-14 10:50:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
25+
QFN-8
6000
就找我吧!--邀您体验愉快问购元件!
INTERSIL
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QFN-8
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INTERSIL
23+
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INTERSIL
23+
NA
127
专做原装正品,假一罚百!
INTERSIL
24+
QFN
37200
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Intersil
2318+
VQFN-8
6890
长期供货进口原装热卖现货
Intersil
25+
8-VQFN
4258
原装正品 价格优势
Intersil
22+
14SOIC
9000
原厂渠道,现货配单
Intersil
25+
16LDQFN
3200
全新原装、诚信经营、公司现货销售
INTERSIL
23+
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当天发货全新原装现货