Description

The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

Features

• Two 10A Power MOS N-Channel Transistors

• Output Voltage to 60V

• rDS(ON) . . . . . 0.135Ω Max Per Transistor at VGS = 15V

• rDS(ON) . . . . . . 0.15Ω Max Per Transistor at VGS = 10V

• Pulsed Current . . . . . . . . . . . . . . . .25A Each Transistor

• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor

• Grounded Tab Eliminates Heat Sink Isolation