Description

The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

Features

• 15A and 20A, 400V and 500V

• VCE(ON) 2.5V

• TFI 1µs, 0.5µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• No Anti-Parallel Diode

Applications

• Power Supplies

• Motor Drives

• Protection Circuits