The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

Features

• QML Qualified Per MIL-PRF-38535 Requirements

• 1.25 Micron Radiation Hardened SOS CMOS

• Radiation Environment

    - Latch-Up Free Under Any Conditions

    - Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)

    - SEU Immunity. . . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day

    - SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)

• Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)

• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)

• Quiescent Supply Current . . . . . . . . . . . . . . . 5.0µA (Max)

• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .16ns (Max)

Applications

• High Speed Control Circuits

• Sensor Monitoring

• Low Power Designs