Features

• Low Input Capacitance: 2.0pF Typical

• Low Gate Leakage: 0.5pA Typical

• High Breakdown Voltage: -60V Typical

• High Input Impedance

• Small Die: 365um X 365um X 203um

• Bond Pads: 90um X 90um

• Substrate Connected to Gate

• Au Back-Side Finish

Applications

• Small Signal Amplifier

• Ultrahigh Impedance Pre-Amplifier

• Pico-Amp Diodes (PAD)

• High Input Impedance Buffers

• Custom Part Options

Description

The InterFET N0001H Geometry is targeted high

impedance low leakage applications. The low

input capacitance makes it ideal for high

frequency applications.

Standard Parts

• 2N4117/A, 2N4118/A, 2N4119/A

• PAD1, PAD2, PAD5, PAD10

• PAD20, PAD50

• DPAD1, DPAD2, DPAD5, DPAD10

• DPAD20, DPAD50, DPAD100

• IFN421, IFN422, IFN423, IFN424

• IFN425, IFN426, IFN427, IFN428

• VCR7N