Features

• InterFET N0014EU Geometry

• Low Noise: 5 nV/√Hz Typical

• Low Leakage: 2pA Typical

• Low Ciss: 2.3pF Typical

• RoHS Compliant

• SMT, TH, and Bare Die Package options.

Applications

• Hearing Aids

• Mini Microphones

• Infrared Detector Amplifiers

• Battery Powered Amplifiers

• High Gain, Low-Noise Amplifiers

• Replacement for IFND89

Description

The -15V high gain, low noise InterFET IFND89

comes in several package options and is optimized

for low power audio applications. The integrated

back to back diodes offers clamping and

additional gate leakage.