位置:GE28F256L18T85 > GE28F256L18T85详情

GE28F256L18T85中文资料

厂家型号

GE28F256L18T85

文件大小

1699.19Kbytes

页面数量

106

功能描述

StrataFlash Wireless Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INTEL

GE28F256L18T85数据手册规格书PDF详情

The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low voltage, multi-level cell (MLC) technology.

Product Features

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)

— 1.8 V low-power buffered programming at7 µs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64-Mbit and 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ)at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space:

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel® Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (0.13 µm)

■ Density and Packaging

— 64-, 128-, and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

GE28F256L18T85产品属性

  • 类型

    描述

  • 型号

    GE28F256L18T85

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    StrataFlash Wireless Memory

更新时间:2025-10-5 9:38:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INTEL(英特尔)
24+
标准封装
7798
原厂渠道供应,大量现货,原型号开票。
INTEL
16+
SOP14
4000
进口原装现货/价格优势!
INTEL
24+
FBGA
390
INTEL
2005
FBGA
633
原装现货海量库存欢迎咨询
INTEL
25+
FBGA
4500
全新原装、诚信经营、公司现货销售
INTEL
24+
BGA
37500
原装正品现货,价格有优势!
INTEL
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
INTEL/英特尔
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
INTEL
23+
LBGA
8560
受权代理!全新原装现货特价热卖!
INTEL
25+23+
LBGA
38090
绝对原装正品现货,全新深圳原装进口现货